DI(T-BUTYLAMINO)SILANE (BTBAS)
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Purity :99,8%
dioxomolybdenum,dihydrochloride (MoO2Cl2)
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Purity :99
Compound | tetraiodosilane | ||||
---|---|---|---|---|---|
CAS No. | 13465-84-4 | Catalog No. | 11 | Brand | |
Purity | 99% | Packing | 1-5kg | Grade | |
Lead Time | Origin | Loading Port |
Boiling Point | 287ºC |
---|---|
Flash Point | 287.5ºC |
Refractive Index | 1.855 |
Density | 4.19 |
Melting Point | 120-8ºC |
Vapor Pressure | 0.00428mmHg at 25°C |
Silicon tetraiodide is a potential precursor for the deposition of Si-based films. SiI4 is a simple Si-containing precursor which can be used in thermally or UV-assisted CVD processes. SiI4 has a simple structure and provides high film growth rates at low temperatures.
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