Potassium osmate(VI) dihydrate
CAS NO.: 10022-66-9
Purity :99%
Compound | Platinum tetrachloride | ||||
---|---|---|---|---|---|
CAS No. | 13454-96-1 | Catalog No. | titan020926 | Brand | |
Purity | 99% | Packing | 10g | Grade | |
Lead Time | 10Day (s) | Origin | Loading Port |
Stability | Stable at room temperature in closed containers under normal storage and handling conditions. |
---|---|
Storage Condition | Store in a cool, dry place. Keep container closed when not in use. Store in a tightly closed container. Corrosives area. |
Appearance & Physical State | crystalline solid |
Water Solubility | 587 g/L (25 ºC) |
Density | 4.303 |
Melting Point | 370ºC |
Chemical formula PtCl4, molecular weight 336.9. Brown-red crystal, density 4.303g /
Platinum tetrachloride
Platinum tetrachloride
cm3.37 C decomposition of platinum dichloride and chlorine. Hygroscopic. Soluble in water, slightly soluble in ethanol. Dissolved in hydrochloric acid to generate chloroplatinic acid (chloroplatinic acid). Crystals containing 5 crystals of water are obtained when precipitated from an aqueous solution. The crystals are red crystals and have a density of 2.43 g / cm3. Used as analytical reagent, catalyst. By chloroplatinic acid (hydrogen) acid heating in the chlorine flow and prepared. [1]
Molecular formula: PtCl4; brown red crystal. Density 4.303g / cm3. Soluble in hot water, soluble in cold water, acetone, slightly soluble in ethanol, ammonia. Insoluble in ether. Yi Chao solution. Heating to 370 C in chlorine decomposes into platinum dichloride and chlorine. Placed in a hard glass tube by chloroplatinic acid in the boat, the temperature was slowly raised from 60 to 150 , so that the water completely volatile. Within 2h continue to heat up to 275 ~ 300 , holding half an hour, then cooled to 150 . Remove the product quickly crushed, re-placed in the boat, in a stream of chlorine heated to 275 . Insulation for half an hour, hot products will be put into sealed bottle system. For plating. Used as a catalyst and analysis reagent. Also used in the production of semiconductor epitaxy, diffusion processes. [2]
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